PhD position: Strained Germanium Quantum-Well Transistors for IntegratedCryogenic Spin Qubit Readout

Your position

This PhD project aims to explore strained Ge/SiGe quantum-well transistors as integrated cryogenic readout devices for hole-spin qubits. By operating amplification and signal routing closer to the quantum device, the project seeks to enable more compact and scalable readout architectures at very low temperatures. By combining advanced material growth, nanoscale fabrication, and cryogenic device physics within a single material platform, the work aims to develop new concepts for scalable quantum hardware. More broadly, it will strengthen planar germanium as a platform for integrated quantum nanoelectronics and help open a path towards large-scale semiconductor quantum processors.

Your profile

The candidate must have Master studies in nanoscience, physics or any related
engineering. Previous experience in fabrication or transport measurements is desired but not compulsory.